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Transparent indium tin oxide as inkjet‐printed thin film electrodes for organic field‐effect transistors
Author(s) -
Hoffmann Rudolf C.,
Dilfer Stefan,
Schneider Jörg J.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127362
Subject(s) - materials science , indium tin oxide , wetting , thin film transistor , annealing (glass) , amorphous solid , electrode , optoelectronics , indium , thin film , wetting layer , pentacene , nanotechnology , composite material , layer (electronics) , chemistry , organic chemistry
Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10 −3 Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source–drain structures could be obtained by inkjet‐printing and field‐effect transistors were constructed using poly(3‐hexylthiophene) (P3HT) as organic semiconductor.