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Optical characterization of magnetron sputtered p‐type ZnO thin films codoped with Ga and As
Author(s) -
Park JangHo,
Seo HoYeon,
Jeong SangHun,
Lee ByungTeak
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127342
Subject(s) - x ray photoelectron spectroscopy , photoluminescence , materials science , analytical chemistry (journal) , sputter deposition , thin film , cavity magnetron , spectral line , spectroscopy , characterization (materials science) , sputtering , chemistry , optoelectronics , nuclear magnetic resonance , nanotechnology , physics , chromatography , astronomy , quantum mechanics
ZnO films codoped with Ga and As were characterized in detail. It was observed by I – V measurement that the films maintain p‐type characteristics even when the Ga/As ratio is as high as 9. Low‐temperature photoluminescence spectra revealed emissions at 3.36, 3.35, 3.30, and 3.22 eV, which were assigned to the D ° X , the A ° X , the two‐electron‐satellite D ° X , and the DAP transition, respectively. A PL peak also appeared at 3.34 eV in the case of Zn 0.96 Ga 0.03 As 0.01 O and Zn 0.90 Ga 0.09 As 0.01 O films. X‐ray photoelectron spectroscopy indicated formation of Ga–As bonds with increasing Ga concentration, suggesting that the 3.34 eV peak is related to the Ga–As bonds.