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Polymer light‐emitting diodes with doped hole‐transport layers
Author(s) -
Lu Mingtao,
Nicolai Herman T.,
Kuik Martijn,
Wetzelaer GertJan A. H.,
Wildeman Jurjen,
Palmaerts Arne,
Blom Paul W. M.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127319
Subject(s) - doping , dopant , materials science , diode , drop (telecommunication) , polymer , optoelectronics , layer (electronics) , quenching (fluorescence) , conductivity , light emitting diode , voltage , oled , chemistry , nanotechnology , composite material , optics , fluorescence , electrical engineering , physics , engineering
We demonstrate a solution processed bi‐layer PLED based on poly(p‐phenylene vinylene) derivatives using orthogonal solvents. To lower the voltage drop the hole transport layer (HTL) based on poly[2,5‐bis(2′‐ethylhexyloxy)‐ co ‐2,5‐bis(butoxy)‐1,4‐phenylenevinylene] (BEH/BB‐PPV (1:3)) is doped with tetracyano‐tetrafluoro‐quinodimethane (F4TCNQ). The conductivity of BEH/BB‐PPV (1:3) was observed to increase by two orders of magnitude upon doping with F4TCNQ. The doped HTL was observed to lower the operating voltage of a double layer PLED, but suffers from additional quenching by the dopant at higher voltages due to the lack of an electron blocking functionality.