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Effects of B 2 O 3 –Li 2 O additions on the dielectric properties of screen printing Ba 0.6 Sr 0.4 TiO 3 thick films
Author(s) -
Zeng Yike,
Gao Can,
Zhang Guangzu,
Jiang Shenglin
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127276
Subject(s) - sintering , materials science , dielectric , doping , grain size , microstructure , permittivity , relative permittivity , substrate (aquarium) , phase (matter) , analytical chemistry (journal) , diffraction , dielectric loss , screen printing , mineralogy , composite material , optics , optoelectronics , chemistry , oceanography , physics , organic chemistry , geology , chromatography
Ba 0.6 Sr 0.4 TiO 3 (BST) thick films were fabricated on Al 2 O 3 substrate via the screen printing technology by using B 2 O 3 –Li 2 O additions as liquid‐phase sintering aids. The effects of doping of B 2 O 3 and Li 2 CO 3 on the phase compositions, microstructures, and dielectric tunable properties of the thick films were investigated systematically. The X‐ray diffraction patterns showed that BST diffraction peaks shifted toward higher angle with the B 2 O 3 –Li 2 O doping content, which indicated the substitution of B 3+ and Li + in Ba 2+ site. It was also found that the grain size and electrical properties of the thick film were strongly affected by the glass content. The grain size and the relative permittivity decreased obviously with the increase of B 2 O 3 –Li 2 O additive. In addition, for the thick film with 4.5 wt% glass content, optimized sintering, and electrical properties were obtained: the sintering temperature of 900 °C, relative permittivity of 312 (at 10 kHz), dielectric loss of 0.0039, tunability of 16.2% (at 3 kV/mm). These good sintering and electrical properties indicate that BST thick film with B 2 O 3 –Li 2 O addition is benefit for the development of LTCC technology and tunable devices.