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Effects of high‐pressure H 2 O‐annealing on amorphous IGZO thin‐film transistors
Author(s) -
Shin Hyun Soo,
Rim You Seung,
Mo YeonGon,
Choi Chaun Gi,
Kim Hyun Jae
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127243
Subject(s) - materials science , thin film transistor , annealing (glass) , amorphous solid , trapping , passivation , optoelectronics , transistor , thermal stability , electrode , thin film , high pressure , band bending , composite material , layer (electronics) , electrical engineering , nanotechnology , engineering physics , crystallography , voltage , chemical engineering , chemistry , ecology , biology , engineering
Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H 2 O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source–drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge‐trapping sites at in‐ and bottom‐ESLs due to defect passivation with the aid of high‐pressure thermal annealing at 5 atm in H 2 O ambient.