Reply to “Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' ” [Phys. Status Solidi A  205 , 1872 (2008)] | Zendy

Kammermeier T. | Zendy; Ney A. | Zendy; Wieck A. D. | Zendy

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Reply to “Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' ” [Phys. Status Solidi A 205 , 1872 (2008)]

Author(s) -

Kammermeier T.,

Ney A.,

Wieck A. D.

Publication year - 2011

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201127237

Subject(s) - paramagnetism , condensed matter physics , magnetic semiconductor , ferromagnetism , ferromagnetic resonance , impurity , interpretation (philosophy) , semiconductor , materials science , physics , magnetic field , quantum mechanics , optoelectronics , computer science , magnetization , programming language

In a comment by Gehlhoff et al. on our work on “Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN” [Phys. Status Solidi A 205 , 1872 (2008)] the authors claim a contradictory explanation of angular dependent magnetic resonance measurements. Here we discuss their – solely based on computer simulations – claims. We show that an interpretation limited on magnetic impurities can hardly be used to explain the complex magnetic behavior.

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