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Reply to “Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' ” [Phys. Status Solidi A 205 , 1872 (2008)]
Author(s) -
Kammermeier T.,
Ney A.,
Wieck A. D.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127237
Subject(s) - paramagnetism , condensed matter physics , magnetic semiconductor , ferromagnetism , ferromagnetic resonance , impurity , interpretation (philosophy) , semiconductor , materials science , physics , magnetic field , quantum mechanics , optoelectronics , computer science , magnetization , programming language
In a comment by Gehlhoff et al. on our work on “Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN” [Phys. Status Solidi A 205 , 1872 (2008)] the authors claim a contradictory explanation of angular dependent magnetic resonance measurements. Here we discuss their – solely based on computer simulations – claims. We show that an interpretation limited on magnetic impurities can hardly be used to explain the complex magnetic behavior.