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Tunable electroluminescence from low‐threshold voltage LED structure based on electrodeposited Zn 1− x Cd x O‐nanorods/p‐GaN heterojunction
Author(s) -
Pauporté Th.,
Lupan O.,
Viana B.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127215
Subject(s) - heterojunction , nanorod , materials science , electroluminescence , full width at half maximum , optoelectronics , zinc , light emitting diode , ultraviolet , epitaxy , annealing (glass) , diode , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , layer (electronics) , chromatography
Violet light‐emitting diode (LED) structures based on Cd‐alloyed zinc oxide (Zn 1− x Cd x O) nanorods (NRs)/p‐GaN heterojunction have been fabricated by epitaxial electrodeposition at low temperatures in an aqueous soft bath followed by a mild thermal annealing. The ultraviolet (UV) room‐temperature emission peak at around 397 nm with a full width at half‐maximum (FWHM) of 10 nm observed from pure ZnO‐NRs/p‐GaN at room temperature was shifted to 417 nm with FWHM of 14 nm by employing a Zn 0.92 Cd 0.08 O‐NRs/p‐GaN heterojunction. The emission threshold voltage was low at about 5.0 V and the electroluminescence (EL) intensity rapidly increased with the applied forward‐bias voltage. The emission wavelength increased with the Cd content in the alloy. The EL physics mechanism in LED structures of the heterojunctions is discussed.