Premium
Sputter‐deposited Ga–Sn–Zn–O thin films for transparent thin film transistors
Author(s) -
Kim DongHo,
Kim HeyRi,
Kwon JungDae,
Lee GunHwan,
Lee Hee Sung,
Im Seongil
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127213
Subject(s) - sputtering , thin film transistor , materials science , amorphous solid , thin film , sputter deposition , oxygen , analytical chemistry (journal) , optoelectronics , doping , crystallite , nanotechnology , metallurgy , chemistry , layer (electronics) , crystallography , organic chemistry , chromatography
Ga–Sn–Zn–O (GTZO) thin films were prepared on glass substrates at 100 °C by co‐sputtering of Ga‐doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2 /(Ar + O 2 ) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e , field effect mobility of 12.2 cm 2 V −1 s −1 , on/off current ratio of 10 9 , and subthreshold voltage swing of 0.46 V decade −1 .