Premium
Influence of laser energy on the crystallization of Ge 2 Sb 2 Te 5 thin film prepared by pulsed laser deposition
Author(s) -
Hu D. Z.,
Pan F. M.,
Lu X. M.,
Zhu J. S.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127127
Subject(s) - crystallization , materials science , pulsed laser deposition , laser , analytical chemistry (journal) , grain size , impurity , thin film , diffraction , activation energy , deposition (geology) , optics , chemistry , nanotechnology , metallurgy , paleontology , physics , sediment , organic chemistry , chromatography , biology
Four Ge 2 Sb 2 Te 5 thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge 2 Sb 2 Te 5 was investigated. The result shows that laser energy has evident effect on the crystallization of Ge 2 Sb 2 Te 5 , including crystallization temperature, incubation time, Avrami coefficient, and grain size. The sample prepared at 140 mJ/pulse laser energy has the lowest crystallization temperature, the shortest incubation time, the largest Avrami coefficient, and the maximum mean grain size. The result of X‐ray diffraction indicates that there are impurity‐phase peaks in the pattern of the sample prepared at 190 mJ/pulse laser energy. A possible reason was given for these phenomenons.