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Structure and optical properties of silicon layers with GaSb nanocrystals created by ion‐beam synthesis
Author(s) -
Komarov F.,
Vlasukova L.,
Milchanin O.,
Mudryi A.,
Dunets B.,
Wesch W.,
Wendler E.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127060
Subject(s) - materials science , photoluminescence , nanocrystal , ion implantation , annealing (glass) , raman spectroscopy , fluence , ion beam , ion , silicon , analytical chemistry (journal) , optoelectronics , nanotechnology , optics , chemistry , composite material , organic chemistry , chromatography , physics
We have studied the ion‐beam synthesis of GaSb nanocrystals in Si by high‐fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increases from 5 to 60 nm in the samples annealed at 900 °C up to 20–90 nm in the samples annealed at 1100 °C. An existence of significant mechanical stresses within implanted layers has been detected. The stress values have been calculated from the shift of the Si first order Raman band. For the samples annealed at 900 °C a broad band in the spectral region of about 0.75–1.05 eV is detected in the PL spectra. The nature of this PL band is discussed.