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Room temperature DC magnetron sputtering deposition and field emission of Al‐doped ZnO films
Author(s) -
Ye Fan,
Cai XingMin,
Dai FuPing,
Zhang DongPing,
Fan Ping,
Liu LiJun
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127034
Subject(s) - materials science , sputter deposition , doping , raman spectroscopy , thin film , cavity magnetron , raman scattering , analytical chemistry (journal) , electrical resistivity and conductivity , work function , sputtering , field electron emission , thermoelectric effect , seebeck coefficient , optoelectronics , nanotechnology , metal , electron , metallurgy , chemistry , optics , composite material , thermal conductivity , electrical engineering , engineering , chromatography , quantum mechanics , thermodynamics , physics
Al doped ZnO films were prepared by reactive direct current (DC) magnetron sputtering at room temperature. The targets were metallic Al and Zn while the gases were Ar and O 2 . X‐ray diffraction (XRD) shows that the films are of hexagonal structure and Al is successfully doped into ZnO without secondary phases detected. Raman scattering spectra of the films contain the E 1 mode of ZnO. Seebeck effect shows that the films are n‐type and four probe instrument shows that the films are very resistive. The high resistivity is due to the compensation of acceptors such as oxygen vacancies and substitutional nitrogen atoms. The acceptors reduce the electron density and increase the work function of ZnO, which therefore weakens the field emission of Al doped ZnO films.