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Effects of Mg doping to optimize properties ZnO:Al for the transparent conductive oxide (TCO)
Author(s) -
Park S. M.,
Gu G. H.,
Park C. G.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127003
Subject(s) - transmittance , materials science , doping , transparent conducting film , inductively coupled plasma , electrical resistivity and conductivity , band gap , electrical conductor , oxide , sputtering , thin film , optoelectronics , analytical chemistry (journal) , plasma , nanotechnology , chemistry , composite material , metallurgy , physics , quantum mechanics , chromatography , electrical engineering , engineering
In order to achieve good conductivity and high transmittance of transparent conductive oxide (TCO), we attempted to fabricate Mg‐doped ZnO:Al (AZO) films and analyzed their structural, electrical, and optical properties. The Mg‐doped AZO films were successfully deposited on top of the glass substrates by using an ion beam sputter system. The Mg concentration was controlled by varying the number of MgO chips attached on the AZO target. Inductively coupled plasma mass spectrometry (ICP‐MS) was used to determine the concentration of Mg incorporated into the AZO films. The structural, electrical, and optical properties of the Mg‐doped AZO films were found to depend on the Mg concentration. As the Mg concentration increased, the optical band gap also increased because of the replacement of Mg with Zn in the TCO films.