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Frontispiece: Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes (Phys. Status Solidi A 7/2011)
Author(s) -
Pernot Cyril,
Fukahori Shinya,
Inazu Tetsuhiko,
Fujita Takehiko,
Kim Myunghee,
Nagasawa Yosuke,
Hirano Akira,
Ippommatsu Masamichi,
Iwaya Motoaki,
Kamiyama Satoshi,
Akasaki Isamu,
Amano Hiroshi
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201121824
Subject(s) - light emitting diode , materials science , optoelectronics , diode , sapphire , ultraviolet , quantum efficiency , heat sink , optics , laser , electrical engineering , physics , engineering
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes Improving the performance of ultraviolet (UV) light emitting diodes (LEDs) will allow their use in a wide range of applications including air and water purification, surface disinfection, UV curing, and so on. The article by Cyril Pernot et al. on pp. 1594–1596 presents the performance of AlGaN‐based flip‐chip LEDs grown on high quality AlGaN templates with sapphire substrate. External quantum efficiencies over 3% were obtained for wavelength ranging from 255 to 355 nm, with maximum value reaching 5.1% for 280 nm LED. In addition, under 500 mA dc operation – output powers of 38, 77, and 64 mW were measured for 257, 280, and 354 nm, respectively. Those values are expected to increase by up to 50% when using enhanced light extraction technologies. The photograph above shows a reliability test of UV LEDs mounted on TO‐5 without heat sink. The devices were tested at 60 mA dc and the light output power remained over 80% of initial value after 1000 hours.