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MBE growth and design of II–VI heterostructures for epitaxial lift‐off
Author(s) -
Davidson Ian A.,
Moug Richard T.,
Vallance Erin C.,
Tamargo Maria C.,
Prior Kevin A.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100584
Subject(s) - epitaxy , optoelectronics , materials science , heterojunction , semiconductor , substrate (aquarium) , photoluminescence , layer (electronics) , lift (data mining) , metastability , etching (microfabrication) , nanotechnology , chemistry , computer science , oceanography , organic chemistry , geology , data mining
Abstract Epitaxial lift‐off (ELO) is a post‐growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for III–V semiconductors, and has previously been demonstrated for ZnSe‐based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe. We report here the first successful extension of this process to II–VI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5 × 5 mm 2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.