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Fabrication of a ‐plane InN nanostructures on patterned a ‐plane GaN template by ECR‐MBE
Author(s) -
Araki Tsutomu,
Yamashita Shuhei,
Yamaguchi Tomohiro,
Yoon Euijoon,
Nanishi Yasushi
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100520
Subject(s) - materials science , electron cyclotron resonance , molecular beam epitaxy , nucleation , optoelectronics , nanostructure , fabrication , reflection high energy electron diffraction , epitaxy , nanotechnology , electron , layer (electronics) , chemistry , medicine , physics , alternative medicine , organic chemistry , quantum mechanics , pathology
a ‐plane InN nanostructures were fabricated on a hole‐patterned a ‐plane GaN template by electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy (ECR‐MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a ‐plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N‐polar [000–1] direction is higher than those in the In‐polar [0001] and [1–100] directions. a ‐plane InN nanowalls were fabricated by exploiting the different the growth rates in the 〈0001〉 and 〈1–100〉 directions.SEM image of position‐controlled a ‐plane InN nanostructures grown by ECR‐MBE on a hole‐patterned a ‐plane GaN template.