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Formation of a disorderd hetero‐junction by diffusion of Cu I from CuSCN into In 2 S 3 layers: A surface photovoltage study
Author(s) -
Juma Albert,
Kavalakkatt Jaison,
Pistor Paul,
Latzel Björn,
Schwarzburg Klaus,
Dittrich Thomas
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100509
Subject(s) - surface photovoltage , annealing (glass) , diffusion , analytical chemistry (journal) , materials science , charge carrier , p–n junction , diffusion process , relaxation (psychology) , quartz , molecular physics , chemistry , semiconductor , optoelectronics , spectroscopy , physics , psychology , social psychology , chromatography , quantum mechanics , composite material , thermodynamics , knowledge management , innovation diffusion , computer science
Charge‐selective disordered hetero‐junctions were formed in evaporated In 2 S 3 layers by diffusing at 200 °C Cu I from a CuSCN source. The thicknesses of In 2 S 3 layers and diffusion times were varied between 5 and 80 nm and between 2 and 19 min, respectively. In some cases CuSCN layers were etched back with pyridine. Spectral and time‐dependent surface photovoltage measurements were carried out in the capacitor arrangement. It was observed that a competing process of charge separation and relaxation was initiated together with the formation of the charge‐selective In 2 S 3 /In 2 S 3 :Cu hetero‐junction. Modulated SPV amplitude for different annealing times and thicknesses of the evaporated In 2 S 3 layers.