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GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm 2 )
Author(s) -
Lee YiChe,
Zhang Yun,
Lochner Zachary M.,
Kim HeeJin,
Ryou JaeHyun,
Dupuis Russell D.,
Shen ShyhChiang
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100436
Subject(s) - materials science , optoelectronics , bipolar junction transistor , common emitter , heterojunction , input offset voltage , transistor , heterojunction bipolar transistor , substrate (aquarium) , breakdown voltage , gallium nitride , power density , voltage , power (physics) , electrical engineering , nanotechnology , physics , layer (electronics) , amplifier , oceanography , operational amplifier , cmos , quantum mechanics , geology , engineering
We report ultra‐high‐power performance on npn GaN/InGaN double heterojunction bipolar transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured common‐emitter current gain ( h fe ) reaches 80. A quasi‐static I – V measurement shows that J C > 141 kA/cm 2 and a power density of 3.05 MW/cm 2 can be achieved for DHBTs grown on an FS‐GaN substrate. When the temperature is increased to 250 °C, a GaN/InGaN DHBT shows h fe = 43 and the offset voltage is reduced from 0.8 V at the room temperature to 0.3 V. Similarly, the knee voltage is reduced from 5.2 V at room temperature to 2.75 V at 250 °C. In this particular device, breakdown voltage (BV CEO ) increases from 90 V at room temperature to 157 V at 250 °C.