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Enhancement of two‐dimensional electron gases in AlGaN‐channel high‐electron‐mobility transistors with AlN barrier layers
Author(s) -
Hashimoto Shin,
Akita Katsushi,
Yamamoto Yoshiyuki,
Ueno Masaki,
Nakamura Takao,
Takeda Kenichiro,
Iwaya Motoaki,
Honda Yoshio,
Amano Hiroshi
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100379
Subject(s) - materials science , high electron mobility transistor , barrier layer , epitaxy , electron mobility , optoelectronics , transistor , layer (electronics) , induced high electron mobility transistor , relaxation (psychology) , heterojunction , lattice (music) , electron , electron diffraction , diffraction , nanotechnology , electrical engineering , optics , psychology , social psychology , physics , voltage , quantum mechanics , acoustics , engineering
We have demonstrated a high sheet carrier concentration in AlGaN‐channel high‐electron‐mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X‐ray diffraction and reveal that the partial lattice relaxation occurs in the Al 0.51 GaN‐channel layers on the AlN buffer layers, and that the AlN barrier layer was coherently grown on the AlGaN channel layer. The sheet carrier concentration due to two‐dimensional electron gases of the AlN/Al 0.51 GaN HEMT is 2.8 × 10 13 cm −2 , which is enhanced owing to the use of AlN as the barrier layer. This value of the sheet carrier concentration agrees with the calculated value based on the model of partial lattice relaxation in AlGaN channel layer.