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Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica
Author(s) -
Keller Stacia,
Lu Jing,
Mishra Umesh K.,
DenBaars Steven P.,
Speck James S.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100349
Subject(s) - materials science , layer (electronics) , indium , stack (abstract data type) , chemical vapor deposition , electrical resistivity and conductivity , optoelectronics , sheet resistance , conductivity , deposition (geology) , metal , composite material , metallurgy , chemistry , engineering , paleontology , sediment , computer science , electrical engineering , biology , programming language
A significant resistivity reduction was observed for GaN:Si films grown on high purity fused silica by metal organic vapour deposition when an InGaN:Si sacrificial layer was inserted beneath or within the GaN:Si layers. Thereby at least part of the GaN:Si layer on top of the sacrificial layer was grown at high temperature. Using this technique, a film resistance of 0.8 Ω cm was obtained, compared to a resistance of 60 Ω cm measured for the same layer stack without InGaN sacrificial layer.