Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica | Zendy

Keller Stacia | Zendy; Lu Jing | Zendy; Mishra Umesh K. | Zendy; DenBaars Steven P. | Zendy; Speck James S. | Zendy

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Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica

Author(s) -

Keller Stacia,

Lu Jing,

Mishra Umesh K.,

DenBaars Steven P.,

Speck James S.

Publication year - 2012

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201100349

Subject(s) - materials science , layer (electronics) , indium , stack (abstract data type) , chemical vapor deposition , electrical resistivity and conductivity , optoelectronics , sheet resistance , conductivity , deposition (geology) , metal , composite material , metallurgy , chemistry , engineering , paleontology , sediment , computer science , electrical engineering , biology , programming language

A significant resistivity reduction was observed for GaN:Si films grown on high purity fused silica by metal organic vapour deposition when an InGaN:Si sacrificial layer was inserted beneath or within the GaN:Si layers. Thereby at least part of the GaN:Si layer on top of the sacrificial layer was grown at high temperature. Using this technique, a film resistance of 0.8 Ω cm was obtained, compared to a resistance of 60 Ω cm measured for the same layer stack without InGaN sacrificial layer.

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