Unintentional incorporation of H and related structural and free‐electron properties of  c ‐ and  a ‐plane InN | Zendy

Darakchieva V. | Zendy; Lorenz K. | Zendy; Xie M.Y. | Zendy; Alves E. | Zendy; Schaff W. J. | Zendy; Yamaguchi T. | Zendy; Nanishi Y. | Zendy; Ruffenach S. | Zendy; Moret M. | Zendy; Briot O. | Zendy

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Unintentional incorporation of H and related structural and free‐electron properties of c ‐ and a ‐plane InN

Author(s) -

Darakchieva V.,

Lorenz K.,

Xie M.Y.,

Alves E.,

Schaff W. J.,

Yamaguchi T.,

Nanishi Y.,

Ruffenach S.,

Moret M.,

Briot O.

Publication year - 2012

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201100175

Subject(s) - annealing (glass) , impurity , polar , materials science , electron , plane (geometry) , crystallography , condensed matter physics , chemistry , composite material , physics , geometry , mathematics , organic chemistry , quantum mechanics , astronomy

In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c ‐plane and nonpolar a ‐plane surface orientations in relation to their structural and free‐electron properties. We find that the as‐grown nonpolar films exhibit generally higher bulk and near‐surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a ‐plane films are discussed.

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