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Unintentional incorporation of H and related structural and free‐electron properties of c ‐ and a ‐plane InN
Author(s) -
Darakchieva V.,
Lorenz K.,
Xie M.Y.,
Alves E.,
Schaff W. J.,
Yamaguchi T.,
Nanishi Y.,
Ruffenach S.,
Moret M.,
Briot O.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100175
Subject(s) - annealing (glass) , impurity , polar , materials science , electron , plane (geometry) , crystallography , condensed matter physics , chemistry , composite material , physics , geometry , mathematics , organic chemistry , quantum mechanics , astronomy
In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c ‐plane and nonpolar a ‐plane surface orientations in relation to their structural and free‐electron properties. We find that the as‐grown nonpolar films exhibit generally higher bulk and near‐surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a ‐plane films are discussed.