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Optical and electrical characteristics of Mn‐doped InN grown by plasma‐assisted molecular beam epitaxy
Author(s) -
Chai Jessica H.,
Song YoungWook,
Reeves Roger J.,
Durbin Steven M.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100153
Subject(s) - molecular beam epitaxy , materials science , indium nitride , photoluminescence , reflection high energy electron diffraction , doping , optoelectronics , indium , acceptor , band gap , scanning electron microscope , electron diffraction , nitride , epitaxy , layer (electronics) , nanotechnology , optics , diffraction , composite material , condensed matter physics , physics
With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it is the acceptor of choice for GaN and GaInN. There are several other possibilities, however, which may be worth considering. In this paper, we describe the in situ doping of InN using Mn in a plasma‐assisted molecular beam epitaxy process. Evidence of surfactant behaviour is observed in both in situ reflection high‐enegy electron diffraction (RHEED) and ex situ scanning electron microscopy (SEM). Although electrical measurements are difficult to interpret due to the presence of an electron accumulation layer on the surface, photoluminescence (PL) measurements reveal a number of low‐energy features previously unreported in this material, and may be correlated to Mn forming a deep acceptor.