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Electron and hole scattering dynamics in InN films investigated by infrared measurements
Author(s) -
Ishitani Yoshihiro,
Fujiwara Masayuki,
Imai Daichi,
Kusakabe Kazuhide,
Yoshikawa Akihiko
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100152
Subject(s) - scattering , plasmon , materials science , photoluminescence , electron , spectroscopy , penetration depth , infrared , condensed matter physics , molecular physics , anisotropy , optics , chemistry , physics , optoelectronics , quantum mechanics
InN layers have electron accumulation structure around the surfaces and interfaces with the substrates. Infrared (IR) spectroscopy enables the analysis of the inside bulk region in spite of the high sheet electron density of the order of 10 13 cm −2 in the accumulation layers using the dispersion of the penetration depth. The polarization spectroscopy shows the anisotropic electron and hole scattering rates. The higher scattering rates of electron and hole plasmons vibrating along the c axis are attributed to edge‐type dislocations, while the scattering by Mg or related complex dominates the damping processes of hole plasmons vibrating vertical to the c axis in highly Mg‐doped p‐InN. The smaller photoluminescence (PL) intensity of p‐InN is attributed to the smaller activation energy of carriers to be captured by deep levels than that from the captured carriers to the ground state.