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Work function, band bending, and electron affinity in surface conducting (100) diamond
Author(s) -
Edmonds M. T.,
Pakes C. I.,
Mammadov S.,
Zhang W.,
Tadich A.,
Ristein J.,
Ley L.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100010
Subject(s) - work function , diamond , band bending , electron affinity (data page) , fermi level , materials science , doping , electron , electron transfer , work (physics) , bending , electron transport chain , atomic physics , chemistry , condensed matter physics , chemical physics , nanotechnology , optoelectronics , composite material , physics , thermodynamics , layer (electronics) , organic chemistry , quantum mechanics , molecule , biochemistry
The change in electron affinity and band bending as a result of atmosphere and fullerene (C 60 F 48 ) induced surface conductivity on H‐terminated (100) diamond is determined by simultaneously measuring the work function ( ϕ ) and C1s core level shift for both intrinsic and boron doped diamond. Changes in work function as a result of surface transfer doping are shown to not only reflect variations in the position of the surface Fermi level as reported by earlier investigations but also changes in the electron affinity, with the latter accounting for up to 0.63 eV of the highest observed change in ϕ of 1.45 eV.