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Nonequilibrium carrier dynamics in bulk HPHT diamond at two‐photon carrier generation
Author(s) -
Ščajev Patrik,
Gudelis Vytautas,
Ivakin Eugeny,
Jarašiūnas Kęstutis
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201100006
Subject(s) - free carrier absorption , ambipolar diffusion , auger effect , carrier lifetime , diamond , absorption (acoustics) , diffusion , materials science , ultrafast laser spectroscopy , chemistry , atomic physics , analytical chemistry (journal) , optoelectronics , molecular physics , laser , auger , wavelength , electron , optics , physics , quantum mechanics , chromatography , silicon , composite material , thermodynamics
We demonstrate applicability of time‐resolved free‐carrier absorption and transient grating techniques for investigation of carrier recombination and diffusion features in a bulk diamond. Carrier injection into a 1 mm thick, IIa type high‐pressure high‐temperature grown layer was realized by two‐photon absorption of ∼5 ps laser pulse at 351 nm wavelength. Kinetics of differential transmission in 80–800 K range at various excess carrier densities provided carrier lifetimes of 360 ns at room temperature and their temperature dependences. A linear increase of carrier recombination rate with injection in 450–800 K range resulted in carrier lifetimes up to 1 ns and was fitted by effective coefficient B * = 2 × 10 −11 – 4 × 10 −9 cm 3 /s. The latter process was attributed to a trap‐assisted Auger recombination (TAAR) with coefficient C TAAR = B */ N Trap and tentatively ascribed to nitrogen related traps. An ambipolar carrier mobility with its peak value of ∼1500 cm 2 /Vs at room temperature was measured by transient grating technique at ∼1.5 × 10 15 cm −3 excess carrier density.