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Back Cover (Phys. Status Solidi A 8/2010)
Author(s) -
Kumaresan R.,
Umezawa H.,
Shikata S.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201090018
Subject(s) - cover (algebra) , diamond , schottky diode , layer (electronics) , optoelectronics , parasitic element , schottky barrier , diode , resistance (ecology) , equivalent series resistance , materials science , electrical engineering , composite material , engineering , mechanical engineering , biology , ecology , voltage
Diamond Schottky barrier diodes (SBDs) are promising candidates for high current operation. Towards achieving this, the device series resistance ( R s ) has to be manipulated carefully, and the parasitic resistance [ R (p + )] originating from the p + layer of the diamond SBDs has a significant influence in constituting the device R s . For the first time, Kumaresan et al. (see the article on pp. 1997‐2001 ) carried out a systematic analysis of the parasitic resistance of pseudo‐vertical type diamond SBDs, and for this the authors designed an elegant structure, as shown in the cover image at top. The left bottom image is a curve fitting analysis result of device R s which reveals the significance of parasitic resistance on device R s , and the right bottom image reveals that the parasitic resistance from p + layer can be engineered by varying its thickness suitably. This study paves a way towards designing the p + layer thickness for achieving a high current transport of the fabricated device, by means of minimizing the parasitic resistance of the p + layer.