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Growth and magnetic properties of ultrathin single crystal Fe 3 O 4 film on InAs(100)
Author(s) -
Huang Zhaocong,
Zhai Ya,
Xu Yongbing,
Wu Jing,
Thompson Sarah M.,
Holmes S. N.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201084196
Subject(s) - materials science , epitaxy , condensed matter physics , magnetic anisotropy , electron diffraction , annealing (glass) , film plane , kerr effect , semiconductor , anisotropy , band gap , hysteresis , diffraction , single crystal , magnetization , crystallography , optics , magnetic field , optoelectronics , nanotechnology , chemistry , layer (electronics) , composite material , physics , quantum mechanics , nonlinear system
Different thickness of ultrathin films of magnetite (Fe 3 O 4 ) have been grown epitaxially on zinc‐blende narrow band‐gap semiconductor InAs(100) surfaces by in situ post‐growth annealing of ultrathin epitaxial Fe films at 300 °C in an oxygen partial pressure of 5 × 10 −5 mbar. Reflection high‐energy electron‐diffraction patterns show that the epitaxial Fe 3 O 4 films have been rotated by 45° in‐plane to match the InAs substrates. The magnetic hysteresis loops obtained by magneto‐optic Kerr effect (MOKE) shows a in‐plane uniaxial magnetic anisotropy for the ultrathin films, and the global easy axis is rotated from the uniaxial easy [011] direction to the cubic easy [010] direction when the thickness of the film increases.