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Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)
Author(s) -
Berger Bastian,
Schüler Nadine,
Anger Sabrina,
GründigWendrock Bianca,
Niklas Jürgen R.,
Dornich Kay
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201083994
Subject(s) - materials science , characterization (materials science) , photoconductivity , semiconductor , optoelectronics , microwave , indium phosphide , silicon carbide , silicon , deep level transient spectroscopy , gallium arsenide , transient (computer programming) , nanotechnology , computer science , telecommunications , metallurgy , operating system
The contactless electrical characterization techniques MDP and MD‐PICTS will be presented in this paper. Both methods are predestined for defect investigation in a variety of semiconductors. Due to a so far not reached sensitivity, major advantages of MDP are its high spatial resolution and its measurement speed, which allows for two dimensional inline measurements at production speed. Furthermore a versatile numerical tool for simulations of electrical properties of a semiconductor as a function of defect parameters was developed. MD‐PICTS is a contactless temperature dependent measurement which allows the determination of activation energies of trap levels in the material. To demonstrate the abilities of both methods, measurements conducted at different semiconductor materials, e.g. silicon, silicon carbide, gallium arsenide and indium phosphide, will be presented exemplarily.