Premium
Structural characterization of CuInS 2 thin films from Cu–In metal inks
Author(s) -
Chen Guanbi,
Wang Lei,
Sheng Xia,
Chang Lantao,
Luo Yeping,
Yang Deren
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026782
Subject(s) - materials science , characterization (materials science) , x ray photoelectron spectroscopy , raman spectroscopy , chemical engineering , metal , phase (matter) , thin film , diffusion , impurity , etching (microfabrication) , analytical chemistry (journal) , metallurgy , nanotechnology , chemistry , layer (electronics) , organic chemistry , optics , physics , engineering , thermodynamics
We report the structural characterization of CuInS 2 thin films based on Cu–In metal inks. CuInS 2 films from the precursor films with different Cu/In ratios were sulfurized and investigated by SEM, XRD, Raman, and XPS. Morphological and compositional changes before and after etching of CuS impurity phase were also compared. By ex situ characterization of the CuInS 2 films sulfurized at different temperatures, an established mechanism is proposed to explain the sulfurization process. The sulfurization is a diffusion‐limited process, in which the diffusion rate differences of Cu and In control the intermediate phases. Moreover, the Cu/In ratio and sulfurization temperature determine the morphological and structural qualities of the CuInS 2 films.