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A study on the graphene incorporated direct‐patternable SnO 2 thin film
Author(s) -
Kim Hyuncheol,
Yun MinKyung,
Park HyungHo
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026770
Subject(s) - graphene , materials science , crystallinity , thin film , photoresist , transmittance , etching (microfabrication) , nanotechnology , electrical resistivity and conductivity , graphene oxide paper , graphene foam , chemical engineering , optoelectronics , composite material , layer (electronics) , engineering , electrical engineering
The electrical property of direct‐patternable SnO 2 thin film was improved by the incorporation of graphene. Graphene were incorporated into SnO 2 photosensitive solution and the direct‐patternable film was prepared by photochemical solution deposition. The incorporation of graphene into SnO 2 films slightly reduced the transmittance of the films due to light scattering by the incorporated graphene. In addition, with incorporation of graphene, the crystallinity of the SnO 2 thin films was decreased slightly and the resistivity was improved due to an enhancement of mobility because of the π‐bond nature of surface on graphene. Direct‐patterning of graphene incorporated SnO 2 thin films was performed without photoresist or etching process. These results suggest that a micropatterned system can be simply fabricated at a low cost and the electrical properties of SnO 2 films can be improved by incorporating graphene.