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Inverted bottom‐emission organic light emitting diodes using MoO 3 for both hole and electron injections
Author(s) -
Qin Dashan,
Liu Jinsuo,
Chen Yuhuan,
Cheng Cuiran,
Quan Wei
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026718
Subject(s) - diode , dopant , materials science , oled , doping , electron , optoelectronics , cathode , layer (electronics) , diffusion , analytical chemistry (journal) , chemistry , nanotechnology , physics , thermodynamics , quantum mechanics , chromatography
Inverted bottom‐emission organic light emitting diodes (IBOLEDs) using MoO 3 for both hole and electron injections were fabricated. The IBOLED using 10 nm MoO 3 for hole injection and 5 nm MoO 3 /5 nm Li 2 CO 3 doped bathocuproine (Li 2 CO 3 :BCP, 1:4 in mass) for electron injection showed nearly same I – V characteristics as the reference device utilizing 10 nm MoO 3 for hole injection and 10 nm 1:4 Li 2 CO 3 :BCP for electron injection, whereas, the former device provided increased current efficiencies than the latter device, as a result of the relieved diffusion of n‐typed dopant into the emissive layer in the former device. We provide an efficient, low‐cost alternative to realizing the electron injection in IBOLEDs.