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XPS analysis and valence band structure of a low‐dimensional SiO 2 /Si system after Si + ion implantation
Author(s) -
Zatsepin D. A.,
Mack P.,
Wright A. E.,
Schmidt B.,
Fitting H.J.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026713
Subject(s) - x ray photoelectron spectroscopy , heterojunction , analytical chemistry (journal) , materials science , stoichiometry , ion , oxide , silicon , binding energy , ion implantation , atomic physics , chemistry , nuclear magnetic resonance , optoelectronics , physics , organic chemistry , chromatography , metallurgy
A X‐ray photoelectron spectroscopy (XPS) of valence band (VB) and core levels are performed for a SiO 2 /p‐Si heterostructure containing a thin oxide layer of d = 20 nm thickness and implanted by Si + ions. With an implantation energy of 12 keV the maximum density of the implanted Si + profile is located close to the SiO 2 –Si interface at a depth of 18 nm, but a piling‐up of Si is also found immediately beneath the surface up to 2 nm, i.e., within the escape depth of XPS electrons. Thus we may expect a partial phase separation associated with Si aggregation and nanocluster formation imbedded in a non‐stoichiometric SiO x matrix. By means of XPS and in comparison to X‐ray emission spectroscopy (XES) the related changes of the VB structure are investigated.