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A comparative study of the microstructure–dielectric properties of crystalline SrTiO 3 ALD films obtained via seed layer approach
Author(s) -
Popovici Mihaela,
Tomida Kazuyuki,
Swerts Johan,
Favia Paola,
Delabie Annelies,
Bender Hugo,
Adelmann Christoph,
Tielens Hilde,
Brijs Bert,
Kaczer Ben,
Pawlak Malgorzata A.,
Kim MinSoo,
Altimime Laith,
Van Elshocht Sven,
Kittl Jorge A.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026710
Subject(s) - microstructure , materials science , atomic layer deposition , annealing (glass) , crystallization , tin , layer (electronics) , dielectric , deposition (geology) , thin film , chemical engineering , mineralogy , analytical chemistry (journal) , crystallography , composite material , nanotechnology , metallurgy , chemistry , optoelectronics , organic chemistry , engineering , biology , paleontology , sediment
SrTiO 3 (STO) films were grown by atomic layer deposition (ALD) on TiN using Sr( t ‐Bu 3 Cp) 2 , Ti(OCH 3 ) 4 and H 2 O. After crystallization anneal, large single crystals grains were obtained and nanocracks were present. The microstructure can be changed using a thin STO crystalline seed spike annealed at 700 °C, which induces formation of much smaller grains in the top layer after post‐deposition anneal. The seed approach was also applied for a layer that was directly deposited in crystalline state at 370 °C, with a Ti(Me 5 Cp)(OMe) 3 precursor thermally stable at this temperature of deposition. The nanocracks were reduced or totally eliminated when using the seed layer template approach. Nevertheless, the leakage current is only reduced for the case when the Ti(OCH 3 ) 4 precursor was used.