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Field‐effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds
Author(s) -
Hoffmann Rudolf C.,
Dilfer Stefan,
Issanin Alexander,
Schneider Jörg J.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026694
Subject(s) - zinc , thin film transistor , materials science , decomposition , thin film , oxide , transistor , chemical engineering , inorganic chemistry , chemistry , nanotechnology , organic chemistry , metallurgy , layer (electronics) , electrical engineering , voltage , engineering
Solution processed zinc oxide thin films are derived from different organometallic alkoxyalkyl zinc compounds [Zn(OR 1 )R 2 ] 4 and their performance in field‐effect transistors (FETs) has been studied systematically. The influence of various residues R 1 or R 2 on the decomposition behaviour of the organometallic precursors and the resulting film morphology is discussed. The performance of the FETs could be enhanced by employment of a post‐processing treatment with hydrogen plasma, leading to higher electron carrier mobilities as well as stable on/off ratios.