Field‐effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds | Zendy

Hoffmann Rudolf C. | Zendy; Dilfer Stefan | Zendy; Issanin Alexander | Zendy; Schneider Jörg J. | Zendy

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Field‐effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds

Author(s) -

Hoffmann Rudolf C.,

Dilfer Stefan,

Issanin Alexander,

Schneider Jörg J.

Publication year - 2011

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201026694

Subject(s) - zinc , thin film transistor , materials science , decomposition , thin film , oxide , transistor , chemical engineering , inorganic chemistry , chemistry , nanotechnology , organic chemistry , metallurgy , layer (electronics) , electrical engineering , voltage , engineering

Solution processed zinc oxide thin films are derived from different organometallic alkoxyalkyl zinc compounds [Zn(OR 1 )R 2 ] 4 and their performance in field‐effect transistors (FETs) has been studied systematically. The influence of various residues R 1 or R 2 on the decomposition behaviour of the organometallic precursors and the resulting film morphology is discussed. The performance of the FETs could be enhanced by employment of a post‐processing treatment with hydrogen plasma, leading to higher electron carrier mobilities as well as stable on/off ratios.

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