Premium
Improved switching characteristics of perovskite oxide‐based resistance random access memory by high‐pressure oxygen annealing at low temperature
Author(s) -
Lee Wootae,
Jo Minseok,
Park Jubong,
Lee Joonmyoung,
Park Sangsu,
Kim Seonghyun,
Jung Seungjae,
Shin Jungho,
Lee Daeseok,
Siddik Manzar,
Hwang Hyunsang
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026559
Subject(s) - materials science , amorphous solid , resistive random access memory , annealing (glass) , oxide , perovskite (structure) , crystallite , crystallization , oxygen , x ray photoelectron spectroscopy , optoelectronics , non volatile memory , chemical engineering , analytical chemistry (journal) , composite material , electrical engineering , metallurgy , chemistry , crystallography , organic chemistry , chromatography , voltage , engineering
We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr 0.7 Ca 0.3 MnO 3 (PCMO)/Pt device shows good memory characteristics such as device uniformity, endurance, and improved switching speed. X‐ray photoelectron spectroscopy reveals large amounts of oxygen effectively incorporated into the PCMO layer during HPOA, enhancing the crystallization of PCMO at low temperature. X‐ray diffraction analysis confirmed that an amorphous PCMO layer was converted to a polycrystalline structure. These results suggest that HPOA is a promising method for fabricating reliable perovskite oxide‐based RRAM at a low temperature.