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Improving color rendering of Y 3 Al 5 O 12 :Ce 3+ white light‐emitting diodes based on dual‐blue‐emitting active layers
Author(s) -
Chen XianWen,
Zhang Yong,
Li ShuTi,
Yan QiRong,
Zheng ShuWen,
He Miao,
Fan GuangHan
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026552
Subject(s) - light emitting diode , phosphor , color rendering index , materials science , optoelectronics , metalorganic vapour phase epitaxy , sapphire , diode , active layer , blue light , blue laser , chemical vapor deposition , optics , layer (electronics) , laser , nanotechnology , epitaxy , physics , thin film transistor
An InGaN/GaN blue‐violet light‐emitting diode (LED) structure and an InGaN/GaN blue LED structure were grown sequentially on the same sapphire substrate by metal‐organic chemical vapor deposition (MOCVD). At the low injection current, the intensity ratio of blue‐violet light to blue light was almost constant, while the blue light intensity increased gradually with increasing injection current when the latter was more than 40 mA. High color rendering has been realized for a Y 3 Al 5 O 12 :Ce 3+ phosphor‐converted white LED based on dual‐blue‐emitting active layers relative to a single blue‐emitting active layer at the same injection current.