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Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers
Author(s) -
Talvitie Heli,
YliKoski Marko,
Haarahiltunen Antti,
Vähänissi Ville,
Asghar Muhammad Imran,
Savin Hele
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026534
Subject(s) - materials science , wafer , getter , silicon , boron , microelectronics , redistribution (election) , doping , annealing (glass) , layer (electronics) , precipitation , metallurgy , optoelectronics , nanotechnology , chemistry , physics , organic chemistry , politics , meteorology , political science , law
We have studied iron distribution between a boron‐implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the strong accumulation by combining a specific low‐high anneal with high bulk defect density. We determined the dominant mechanism behind the accumulation of iron into the p+ layer, which turned out to be precipitation instead of segregation. The results can be helpful when choosing the internal gettering steps for both microelectronic (IC) and multicrystalline silicon photovoltaic (PV) processes.