Premium
Boron diffusion behavior in silicon during shallow p + / n junction formation by non‐melt excimer laser annealing
Author(s) -
Aid Siti Rahmah,
Matsumoto Satoru,
Fuse Genshu
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026531
Subject(s) - annealing (glass) , boron , silicon , materials science , germanium , nanosecond , dopant , excimer laser , dopant activation , analytical chemistry (journal) , amorphous solid , p–n junction , thermal diffusivity , laser , crystallography , optoelectronics , doping , chemistry , semiconductor , optics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics
Boron diffusion in silicon during the formation of a shallow p + / n junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser annealing for several nanoseconds were then performed to regrow the amorphous layer and to activate dopants. We found that this combination of processes results in anomalous diffusion of boron (despite the annealing being performed within several nanoseconds), which increases the junction depth of annealed samples.