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Carrier transport of diamond p + ‐i‐n + junction diode fabricated using low‐resistance hopping p + and n + layers
Author(s) -
Oyama Kazuhiro,
Ri SungGi,
Kato Hiromitsu,
Takeuchi Daisuke,
Makino Toshiharu,
Ogura Masahiko,
Tokuda Norio,
Okushi Hideyo,
Yamasaki Satoshi
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026490
Subject(s) - diode , ohmic contact , materials science , diamond , optoelectronics , metal , layer (electronics) , thermal conduction , analytical chemistry (journal) , chemistry , nanotechnology , composite material , chromatography , metallurgy
We have investigated the carrier transport of a single‐crystal diamond p + ‐i‐n + junction diode fabricated using low‐resistance hopping p + and n + layers, which showed high‐performance diode characteristics. By comparing the diode characteristics of the p + ‐i‐n + junction with those of the p + ‐n + diode and metal/n + /metal structure, the following results were obtained. The carrier transport of the p + ‐i‐n + junction is described using the band conduction caused by the free carriers, although the current transport in both p + and n + layers is mainly by the hopping conduction. The i‐layer in the p + ‐i‐n + junction provides a low‐resistance layer for the forward current and a good blocking layer for the reverse current. The contact resistance of the n + /metal layer affects the carrier transport of the p + ‐i‐n + diode, which lacks the ohmic property even with the phosphorous concentration around 10 20 cm −3 .