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Effects of polarization charge on the photovoltaic properties of InGaN solar cells
Author(s) -
Li Z. Q.,
Lestradet M.,
Xiao Y. G.,
Li S.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026489
Subject(s) - optoelectronics , photovoltaic system , polarization (electrochemistry) , materials science , open circuit voltage , electric field , charge carrier , voltage , solar cell , short circuit , theory of solar cells , charge (physics) , solar cell efficiency , physics , electrical engineering , chemistry , quantum mechanics , engineering
The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed in detail using 2D drift‐diffusion simulations. The polarization charge at the GaN/InGaN interface creates an electric field that forces carriers generated by light to drift in opposite direction needed for efficient collection and substantially reduces the short circuit current ( I sc ) and open circuit voltage ( V oc ). The polarization charge plays an important role in the photovoltaic properties of InGaN solar cells comparable to that of defects. For small interface charge, the potential barrier could increase the V oc .
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