Premium
Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate
Author(s) -
Park SeoungHwan,
Moon YongTae,
Lee Jeong Sik,
Kwon Ho Ki,
Park Joong Seo,
Ahn Doyeol
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026420
Subject(s) - materials science , optoelectronics , quantum well , light emitting diode , substrate (aquarium) , strain (injury) , wavelength , optics , physics , laser , medicine , oceanography , geology
Optical properties of strain‐compensated InGaN/InGaN quantum well (QW) structures using a InGaN substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures using a GaN substrate. The strain‐compensated QW structure shows that a smaller well thickness is needed to obtain the transition wavelength of 530 nm than the InGaN/GaN QW structure. The spontaneous emission peak of a strain‐compensated QW structure is shown to be much larger than that of a conventional QW structure. This is mainly attributed to the fact that the internal field is reduced due to the decrease in the lattice mismatch with a substrate.