Premium
Luminescence spectroscopy of europium doped gallium nitride powder prepared by a Na flux method
Author(s) -
Brown Ei,
Hömmerich Uwe,
Yamada Takahiro,
Yamane Hisanori,
Zavada John
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026392
Subject(s) - europium , photoluminescence , luminescence , materials science , doping , excitation , gallium nitride , analytical chemistry (journal) , gallium , spectroscopy , nitride , photoluminescence excitation , flux (metallurgy) , ion , optoelectronics , chemistry , nanotechnology , metallurgy , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography
The red emission properties of Eu doped gallium nitride (GaN) powder prepared by a Na flux method were characterized by time‐resolved photoluminescence (PL) and site‐selective PL excitation studies. Under above‐gap excitation (325 nm), Eu 3+ doped GaN powders exhibited bright red luminescence at ∼622 nm ( 5 D 0 → 7 F 2 transition). The room‐temperature emission lifetime was determined to be ∼242 µs and increased only slightly at 10 K with a value of ∼252 µs. At the same time, the integrated Eu 3+ PL intensity was quenched by a factor of ∼20 for the temperature range from 10 to 300 K. Low temperature PL excitation studies in the region of the 7 F 0 → 5 D 0 transition of Eu 3+ ions indicated the existence of multiple Eu 3+ centers with distinct excitation and emission properties in GaN:Eu powder.