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Effect of indium mole fraction on infrared light emitting diode (LED) device performance
Author(s) -
Das Naresh C.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026350
Subject(s) - indium , optoelectronics , light emitting diode , materials science , diode , fabrication , mole fraction , infrared , cascade , quantum well , optical power , optics , chemistry , physics , laser , pathology , chromatography , medicine , alternative medicine
We report on the design and fabrication of interband cascade light emitting diode (LED) device with InAs/Ga 1− x In x Sb/InAs quantum well (QW) active region. We have varied indium (In) contents in the QW region between 18 and 30% from x = 0.18 to 0.3 and found that light emission power increases with decrease of In percentage value. We observed a 200% increase in light emission power by decreasing the In content from 30 to 18%. By cooling the LED device, we observed a higher increase in light output power for higher In content devices compared to that of lower In content devices.