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Influence of tube diameter on carbon nanotube interconnect delay and power output
Author(s) -
Rai Mayank Kumar,
Sarkar Sankar
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026314
Subject(s) - interconnection , carbon nanotube , materials science , bundle , inductance , tube (container) , dissipation , capacitance , nanotube , optoelectronics , power (physics) , composite material , nanotechnology , electrical engineering , voltage , computer science , chemistry , engineering , physics , electrode , quantum mechanics , thermodynamics , computer network
This paper address the influence of tube diameter on single walled carbon nanotube (CNT) bundle interconnect delay and power output in Very Large Scale application. We find that single‐walled carbon nanotube (SWCNT) bundle interconnects are of lower delay than copper interconnect due to low resistance and inductance. Power dissipation decreases with increase in tube diameter of the constituent SWCNT. CNT interconnect resistance and inductance increases with increase in tube diameter. On the other hand, with increase in tube diameter interconnect capacitance decreases. There is a trade off between delay and power dependence on tube diameter.