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Improvement of breakdown characteristics in AlGaN/GaN/Al x Ga 1− x N HEMT based on a grading Al x Ga 1− x N buffer layer
Author(s) -
Yu Hongbo,
Lisesivdin Sefer B.,
Bolukbas Basar,
Kelekci Ozgur,
Ozturk Mustafa Kemal,
Ozcelik Suleyman,
Caliskan Deniz,
Ozturk Mustafa,
Cakmak Huseyin,
Demirel Pakize,
Ozbay Ekmel
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026270
Subject(s) - high electron mobility transistor , materials science , optoelectronics , breakdown voltage , heterojunction , resistive touchscreen , gallium nitride , transistor , voltage , electrical engineering , layer (electronics) , nanotechnology , engineering
To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al x Ga 1− x N double heterostructure (DH‐HEMTs) were designed and fabricated by replacing the semi‐insulating GaN buffer with content graded Al x Ga 1− x N ( x = x 1 → x 2 , x 1 > x 2 ), in turn linearly lowering the Al content x from x 1 = 90% to x 2 = 5% toward the front side GaN channel on a high temperature AlN buffer layer. The use of a highly resistive Al x Ga 1− x N epilayer suppresses the parasitic conduction in the GaN buffer, and the band edge discontinuity limits the channel electrons spillover, thereby reducing leakage current and drain current collapse. In comparison with the conventional HEMT that use a semi‐insulating GaN buffer, the fabricated DH‐HEMT device with the same size presents a remarkable enhancement of the breakdown voltage.