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Ultraviolet light sensitive In‐doped ZnO thin film field effect transistor printed by inkjet technique
Author(s) -
Wu Yan,
Girgis Emad,
Ström Valter,
Voit Wolfgang,
Belova Lyubov,
Rao K. V.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026264
Subject(s) - materials science , optoelectronics , ultraviolet , photocurrent , saturation current , doping , thin film transistor , photodetector , transistor , field effect transistor , saturation (graph theory) , field effect , nanotechnology , voltage , electrical engineering , layer (electronics) , mathematics , combinatorics , engineering
This indium‐doped zinc oxide field effect transistor (IZO‐FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO‐FETs exhibit a saturation current level of about 10 µA, an incremental mobility as high as 8 cm 2 V −1 s −1 , and a current on/off ratio of 10 4 –10 5 . When illuminated by 363 nm, 1.7 mW cm −2 UV light, the IZO‐FET displays a photocurrent of 2 mA, and a darkness current of ∼20 nA at an optimized gate voltage of −2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO‐FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.