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Initial rise of transient electroluminescence in doped Alq 3 films
Author(s) -
Uddin A.,
Lee C. B.,
Andersson T. G.
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026233
Subject(s) - oled , electroluminescence , doping , common emitter , materials science , dopant , saturation (graph theory) , optoelectronics , light emitting diode , diode , electron mobility , charge carrier , analytical chemistry (journal) , chemistry , nanotechnology , mathematics , layer (electronics) , combinatorics , chromatography
The doping effect on initial rise of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is investigated. The dopants red light emitter 5,6,11,12‐tetraphenylnaphthacene (Rb) and 4‐(diacynomethylene)‐2‐methyl‐6‐( p ‐dimethylaminostyryl)‐4H‐pyan (DCM), and yellow light emitter 3‐(2′‐benzothiazolyl)‐7‐diethylaminocoumarin (C‐6) were used in green light emitter tris‐(8‐hydroxyquinoline) aluminum (Alq 3 ) film with various concentrations from 0.5 to 24 wt%. The increase of EL delay time and the slower rise of EL saturation were observed with doping concentrations. The values of EL delay time was found from 0.78 to 1.86 µs in doped OLED compared to 0.74 µs in pure Alq 3 device. The EL saturation time was found from 1.2 to 2.8 µs for different doping concentration. We have also estimated the carrier mobility from the transient EL measurements. The charge‐carrier mobility was found as 0.5–1.2 × 10 −5 cm 2 V −1 s −1 in doped Alq 3 films.