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1.3 µm InAs/GaAs quantum dots with broad emission spectra
Author(s) -
Tian Peng,
Huang Lirong,
Jiang Bo,
Fei Shuping,
Huang Dexiu
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026232
Subject(s) - photoluminescence , quantum dot , indium , materials science , chemical vapor deposition , spectral line , optoelectronics , emission spectrum , atomic force microscopy , nanotechnology , physics , astronomy
InAs/GaAs quantum dot (QD) structures with broad emission spectra are grown by metal‐organic chemical vapor deposition. The effects of Indium composition of InGaAs strain‐reducing layer and InAs deposited coverage on the optical properties and structural characterization of QDs are investigated using photoluminescence (PL) and atomic force microscopy. It is found that through appropriately selecting growth parameters, the full width at half maximum of PL spectrum reaches up to 183 nm around 1.3 µm, covering the range from 1156 to 1339 nm.