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Bismuth‐metal nanocrystals self‐embedded in high‐ k Bi‐based pyrochlore dielectrics grown at room temperature
Author(s) -
Seong NakJin,
Jung HyunJune,
Yoon SoonGil
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026226
Subject(s) - bismuth , materials science , dielectric , pyrochlore , high κ dielectric , nanocrystal , threshold voltage , analytical chemistry (journal) , optoelectronics , oxide , sputter deposition , gate dielectric , sputtering , nanotechnology , voltage , thin film , electrical engineering , metallurgy , transistor , chemistry , engineering , chromatography , organic chemistry , phase (matter)
Bismuth‐metal nanocrystals (NCs) are self‐embedded within high‐ k Bi 2 Mg 2/3 Nb 4/3 O 7 (BMNO) dielectrics grown at room temperature by rf magnetron sputtering were demonstrated for the low‐voltage nonvolatile memory device. The BMNO pyrochlore films grown in Ar/O 2 ambient at room temperature showed the stable dielectric properties, together with high dielectric constant (∼45), small dielectric loss (0.2%), and improved leakage current. Bismuth nanocrystals (a mean size of 2–3 nm) and a high‐ k BMNO films (∼50 nm thickness) as a control oxide layer were continuously in situ formed at room temperature in Ar and Ar/O 2 ambient, respectively. A significant threshold voltage shift of 0.95 V is observed at a gate voltage of 5 V and the threshold voltage shift linearly increases with increasing gate voltage from 3 to 6 V. The self‐embedded bismuth nanocrystals in high‐ k BMNO dielectrics at room temperature represent a viable candidate for low‐voltage NFGM device applications.