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Structural characteristics of semipolar InN (112 l ) films grown on yttria stabilized zirconia substrates
Author(s) -
Fujii Tomoaki,
Kobayashi Atsushi,
Ohta Jitsuo,
Oshima Masaharu,
Fujioka Hiroshi
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026215
Subject(s) - yttria stabilized zirconia , materials science , cubic zirconia , epitaxy , pulsed laser deposition , deposition (geology) , crystallography , optoelectronics , thin film , nanotechnology , metallurgy , chemistry , ceramic , layer (electronics) , paleontology , sediment , biology
We report on the growth of semipolar InN ( $11\overline {2} l$ ) films on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition. We found that the growth orientation can be precisely controlled by utilizing the tendency for the epitaxial relationships of InN [0001] || YSZ [111] and InN [ $11\overline {2} 0$ ] || YSZ [ $1\overline {1} 0$ ] to be maintained. The full‐width at half‐maximum of the $11\overline {2} 6$ X‐ray rocking curves for an InN ( $11\overline {2} 7$ ) film varies from 0.61 to 0.46° depending on the X‐ray angle of incidence.