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GaN‐based ultraviolet light‐emitting diodes with multifinger contacts
Author(s) -
Rodríguez Hernán,
Lobo Neysha,
Einfeldt Sven,
Knauer Arne,
Weyers Markus,
Kneissl Michael
Publication year - 2010
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201026193
Subject(s) - current crowding , materials science , diode , optoelectronics , light emitting diode , current density , voltage droop , current (fluid) , ultraviolet , equivalent series resistance , contact resistance , electrical engineering , voltage , composite material , physics , engineering , quantum mechanics , voltage divider , layer (electronics)
GaN‐based ultraviolet light‐emitting diodes with identical contact areas but different contact shapes are studied. Interdigitated multifinger contacts with reduced finger width result in a lower series resistance and a thermal roll‐over of the output power at higher cw currents in comparison to square‐shaped contacts. Under pulsed operation, the external quantum efficiency in these devices is increased due to a reduction of the efficiency droop at elevated currents. Simulations of the current distribution explain the experimental data with an improved uniformity of the current density in multifinger contacts as current crowding at the contact edges is largely suppressed.